AP9563H/J
12
10000
f=1.0MHz
-V
GS
, Gate to Source Voltage (V)
10
V
DS
=-32V
I
D
=-12A
8
C (pF)
C
iss
1000
6
4
2
C
oss
C
rss
0
0
10
20
30
40
100
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
0.2
0.1
-I
D
(A)
10
0.1
0.05
1ms
P
DM
0.02
0.01
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
T
c
=25
o
C
Single Pulse
1
0.1
1
10
10ms
100ms
DC
100
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
-4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform