AP9972GR
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
60
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.06
-
-
-
55
-
-
-
32
8
20
11
58
45
80
280
230
1.7
Max. Units
-
-
18
22
3
-
10
25
±100
51
-
-
-
-
-
-
-
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS
=10V, I
D
=35A
V
GS
=4.5V, I
D
=25A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=35A
V
DS
=60V, V
GS
=0V
V
DS
=48V ,V
GS
=0V
V
GS
=±25V
I
D
=35A
V
DS
=48V
V
GS
=4.5V
V
DS
=30V
I
D
=35A
R
G
=3.3Ω,V
GS
=10V
R
D
=0.86Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
3170 5070
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=35A, V
GS
=0V
I
S
=35A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
50
48
Max. Units
1.2
-
-
V
ns
nC
t
rr
Q
rr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Starting T
j
=25
o
C , V
DD
=30V , L=1mH , R
G
=25Ω , I
AS
=30A.
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
