5SHX 19L6010
Diode Data
On-state
(see Fig. 9 to 12, 24, 25)
Maximum rated values
Note 1
Parameter
Max. average on-state
current
Max. RMS on-state current
Max. peak non-repetitive
surge current
Limiting load integral
Max. peak non-repetitive
surge current
Limiting load integral
Characteristic values
Symbol Conditions
I
F(AV)M
Half sine wave, T
C
= 85 °C
I
F(RMS)
I
FSM
I
2
t
I
FSM
I
2
t
Symbol Conditions
V
F
I
F
= 1800 A, T
vj
= 125°C
V
(F0)
r
F
T
vj
= 125°C
I
F
= 200...1800 A
t
p
= 3 ms, T
vj
= 125°C, V
R
= 0 V
t
p
= 10 ms, T
vj
= 125°C, V
R
= 0 V
min
typ
max
340
530
7.7×10
3
Unit
A
A
A
A
2
s
A
A
2
s
Unit
V
V
mΩ
296.5×10
11.6×10
3
3
201.8×10
min
typ
5.8
max
6.4
2.7
2.23
3
Parameter
On-state voltage
Threshold voltage
Slope resistance
Turn-on
Characteristic values
Parameter
Peak forward recovery
voltage
Symbol Conditions
V
FRM
dI
F
/dt = 510 A/µs, T
vj
= 125°C
dI
F
/dt = 3000 A/µs, T
vj
= 125°C
min
typ
max
200
450
Unit
V
V
Turn-off
(see Fig. 13 to 17, 24, 25)
Maximum rated values
Note 1
Parameter
Symbol Conditions
Max. decay rate of on-state di/dt
crit
I
FM
= 1800 A, T
vj
= 125 °C
current
V
DClink
= V
Max. decay rate of on-state di/dt
crit
current
Characteristic values
min
typ
max
510
510
Unit
A/µs
A/µs
I
FM
= 900 A, T
vj
= 125 °C
V
DClink
= V
min
typ
Parameter
Reverse recovery current
Reverse recovery charge
Turn-off energy
Symbol Conditions
I
FM
= 1800 A, V
DC-Link
= 3300 V
I
RM
-dI
F
/dt = 510 A/µs, L
CL
= 300 nH
Q
rr
C
CL
= 10 µF, R
S
= 0.65
Ω,
E
rr
T
vj
= 125°C, D
CL
= 5SDF 08H6005
max
780
2800
Unit
A
µC
J
3.0
4.5
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1229-02 Aug 07
page 3 of 13
ABB [ THE ABB GROUP ]
