60; .
20
10
C
ies
V
CC
= 900 V
15
V
GE
= 0 V
f
OSC
= 1 MHz
V
OSC
= 50 mV
C [nF]
1
V
CC
= 1300
V
GE
[V]
10
C
oes
5
I
C
= 75 A
T
vj
= 25 °C
0
0.0
0.1
0.2
0.3
Q
g
[µC]
0.4
0.5
0.6
0.1
0
5
C
res
10
15
20
V
CE
[V]
25
30
35
)LJ
Typical gate charge characteristics
)LJ
Typical capacitances vs
collector-emitter voltage
This technical information specifies semiconductor devices but promises no characteristics. No warranty or
guarantee expressed or implied is made regarding delivery, performance or suitability.
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Doc. No. 5SYA1619-01 July 03
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