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5SNA1500E3303 参数 Datasheet PDF下载

5SNA1500E3303图片预览
型号: 5SNA1500E3303
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT模块 [IGBT Module]
分类和应用: 双极性晶体管
文件页数/大小: 9 页 / 217 K
品牌: ABB [ THE ABB GROUP ]
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5SNA 1500E330300
IGBT characteristic values
Parameter
Collector (-emitter)
breakdown voltage
Collector-emitter
4)
saturation voltage
Collector cut-off current
Gate leakage current
Gate-emitter threshold voltage
Gate charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
3)
Symbol
V
(BR)CES
V
CE sat
I
CES
I
GES
V
GE(TO)
Q
ge
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
Conditions
V
GE
= 0 V, I
C
= 10 mA, T
vj
= 25 °C
I
C
= 1500 A, V
GE
= 15 V
V
CE
= 3300 V, V
GE
= 0 V
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
min
3300
typ
max
Unit
V
2.4
3.0
3.4
12
120
-500
4.5
11.0
152
500
6.5
V
V
mA
mA
nA
V
µC
V
CE
= 0 V, V
GE
=
±20
V, T
vj
= 125 °C
I
C
= 240 mA, V
CE
= V
GE
, T
vj
= 25 °C
I
C
= 1500 A, V
CE
= 1800 V,
V
GE
= -15 V .. 15 V
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz,
T
vj
= 25 °C
V
CC
= 1800 V,
I
C
= 1500 A,
R
G
= 1.0
Ω,
C
GE
= 220 nF,
V
GE
=
±15
V,
L
σ
= 100 nH, inductive load
V
CC
= 1800 V,
I
C
= 1500 A,
R
G
= 1.5
Ω,
C
GE
= 220 nF,
V
GE
=
±15
V,
L
σ
= 100 nH, inductive load
V
CC
= 1800 V,
I
C
= 1500 A,
R
G
= 1.0
Ω,
C
GE
= 220 nF,
V
GE
= ±15 V,
L
σ
= 100 nH, inductive load
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
12.2
3.77
600
570
220
250
1480
1680
380
470
1380
nF
ns
ns
ns
ns
Turn-on switching energy
E
on
mJ
T
vj
= 125 °C
2000
Turn-off switching energy
E
off
V
CC
= 1800 V,
I
C
= 1500 A,
R
G
= 1.5
Ω,
C
GE
= 220 nF,
V
GE
= ±15 V,
L
σ
= 100 nH, inductive load
T
vj
= 25 °C
1940
mJ
T
vj
= 125 °C
2680
Short circuit current
Module stray inductance
Resistance, terminal-chip
3)
4)
I
SC
L
σ
CE
R
CC’+EE’
t
psc
10
μs,
V
GE
= 15 V, T
vj
= 125 °C,
V
CC
= 2500 V, V
CEM CHIP
3300 V
T
C
= 25 °C
T
C
= 125 °C
6500
10
0.06
0.085
A
nH
mΩ
Characteristic values according to IEC 60747 – 9
Collector-emitter saturation voltage is given at chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1595-00 July 07
page 2 of 9