5SNA 1500E330300
1000
20
V
CC
= 1800 V
C
ies
15
100
V
CC
= 2400 V
V
GE
[V]
V
GE
= 0V
f
OSC
= 1 MHz
V
OSC
= 50 mV
C [nF]
C
oes
10
10
5
C
res
I
C
= 1500 A
T
vj
= 25 °C
1
0
5
10
15
20
V
CE
[V]
25
30
35
0
0
1
2
3
4
5
6
Q
g
[µC]
7
8
9
10
Fig. 9
Typical capacitances
vs collector-emitter voltage
Fig. 10
Typical gate charge characteristics
2.5
V
CC
≤
2500 V, T
vj
= 125 °C
V
GE
= ±15 V, R
G
= 1.5 ohm
2
1.5
I
Cpulse
/ I
C
1
0.5
Chip
Module
0
0
500
1000
1500
2000
2500
3000
3500
V
CE
[V]
Fig. 11
Turn-off safe operating area (RBSOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1595-00 July 07
page 7 of 9
ABB [ THE ABB GROUP ]
