5STB 17N5200
On-state
I
TAVM
I
TRMS
I
TSM
I
2
t
Max. average on-state
t
Max. RMS on-state current
Max. peak non-repetitive
surge current
Limiting load integral
1800 A
2830 A
29000 A
31000 A
4205 kA
2
s
3990 kA
2
s
V
T
V
T0
r
T
I
H
I
L
On-state voltage
Threshold voltage
Slope resistance
Holding current
1.68 V
1.02 V
0.320 mΩ
50-250 mA
25-150 mA
Latching current
100-500 mA
50-300 mA
T
j
T
j
T
j
T
j
= 25°C
= 125°C
= 25°C
= 125°C
tp
tp
tp
tp
I
T
I
T
=
=
=
=
=
=
10 ms T
j
= 125°C
8.3 ms After surge:
10 ms V
D
= V
R
= 0V
8.3 ms
2000 A
1000 - 3000 A
T
j
= 125°C
Half sine wave, T
C
= 70°C
Switching
di/dt
crit
Critical rate of rise of on-state
current
250 A/µs
500 A/µs
Cont. f = 50 Hz V
D
≤
0.67⋅V
DRM
, T
j
= 125°C
60 sec.
f = 50Hz
V
D
= 0.4⋅V
DRM
I
TRM
= 3000 A
I
FG
= 2 A, t
r
= 0.5 µs
I
FG
= 2 A, t
r
= 0.5 µs
t
d
t
q
Q
rr
Delay time
Turn-off time
≤
≤
min
max
3.0 µs
700 µs
V
D
≤
0.67⋅V
DRM
I
TRM
= 3000 A, T
j
= 125°C
dv
D
/dt = 20V/µs V
R
> 200 V, di
T
/dt = -1.5 A/µs
Recovery charge
4000 µAs
5200 µAs
Triggering
V
GT
I
GT
V
GD
I
GD
V
FGM
I
FGM
V
RGM
P
G
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Gate non-trigger current
Peak forward gate voltage
Peak forward gate current
Peak reverse gate voltage
Maximum gate power loss
≤
≤
≥
≥
2.6 V
400 mA
0.3 V
10 mA
12 V
10 A
10 V
3W
T
j
= 25°C
T
j
= 25°C
V
D
= 0.4⋅V
RM
V
D
= 0.4⋅V
RM
T
j
= 125°C
T
j
= 125°C
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1036-03 Sep. 01
page 2 of 6
ABB [ THE ABB GROUP ]
