5STB 17N5200
Fig. 8 Gate trigger characteristics.
Q
rr
(µAs)
30000
Fig. 9 Max. peak gate power loss.
I
RM
(A)
10
3
800
700
600
500
400
300
20000
I
TRM
= 3000 A
T
j
= T
jmax
I
TRM
= 3000 A
T
j
= T
jmax
10
4
8000
7000
6000
5000
5STB 17N5200
4000
3000
200
10
2
5STB 17N5200
80
70
60
2000
1
2
3
4
5 6 7 8 910
30
20
-di
T
/dt (A/µs)
30
1
2
3
4
5 6 7 8 910
-di
T
/dt (A/µs)
20
30
Fig. 10 Recovery charge vs. decay rate of on-
state current.
Fig. 11 Peak reverse recovery current vs. decay
rate of on-state current.
Turn - off time, typical parameter relationship.
1.3
f
2
(-di
T
/dt)
1.2
1.1
5STB 17N5200
1.0
0
4
8
12
16
20
-
di
T
/dt (A/µs)
24
28
32
Fig. 12 t
q
/t
q1
= f
1
(T
j
)
Fig. 13 t
q
/t
q1
= f
2
(-di
T
/dt)
Fig. 14 t
q
/t
q1
= f
3
(dv/dt)
t
q
= t
q1
•
f
1
(T
j
)
•
f
2
(-di
T
/dt)
•
f
3
(dv/dt)
t
q1
:at normalized values (see page 2)
t
q
: at varying conditions
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1036-03 Sep. 01
page 5 of 6
ABB [ THE ABB GROUP ]
