5STB 18U6500
I
G
(t)
100 %
90 %
I
GM
I
GM
I
Gon
di
G
/dt
t
r
t
p
(I
GM
)
≈
2..5 A
≥
1.5 IGT
≥
2 A/µs
≤
1
µs
≈
5...20µs
di
G
/dt
10 %
t
r
t
p
(I
GM
)
t
p
(I
Gon
)
t
I
Gon
Fig. 8
Recommendet gate current waveform.
Fig. 9
Max. rated peak gate power loss.
Fig. 10
Recovery charge vs. decay rate of on-state
current.
Fig. 11
Peak reverse recovery current vs. decay rate
of on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abbsem.com
Doc. No. 5SYA1037-02 Apr. 02
ABB [ THE ABB GROUP ]
