ACE1621B 参数 Datasheet PDF下载

ACE1621B

P-Channel Enhancement Mode Field Effect Transistor

Description

ACE1621B uses advanced trench technology to provide excellent R

DS(ON)

. This device particularly suits

for low voltage application such as power management of desktop computer or notebook computer power

management, DC/DC converter.

Features









V

DS

(V) =-30V

I

D

=-60A

R

DS(ON)

@V

GS

=-20V, I

DS

=-20A, Typ 7.5mΩ

R

DS(ON)

@V

GS

=-10V, I

DS

=-20A, Typ 8.5mΩ

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current * AC

Pulsed Drain Current * B

Power Dissipation

T

A

=25℃

T

A

=70℃

T

A

=25℃

T

A

=70℃

Symbol Max Unit

V

DSS

V

GSS

I

D

I

DM

P

D

-30

±25

-60

-45

-130

100

50

V

V

A

A

W

O

Operating Junction Temperature / Storage Temperature Range T

J

/T

STG

-55/150

C

Packaging Type

TO-252

VER 1.2

1