ACE1621B
P-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE1621B XX + H
Halogen - free
Pb - free
YM : TO-252
Electrical CharacteristicsTA=25℃, unless otherwise specified.
Parameter
Symbol
Conditions
Static
Min. Typ. Max. Unit
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V, ID=-250 uA
-30
V
Gate Threshold Voltage
VGS(th)
IGSS
VDS=VGS, IDS=-250uA
VDS=0V,VGS=±25V
-1.5 -1.8
-3.5
Gate Leakage Current
Zero Gate Voltage Drain
Current
±100 nA
IDSS
VDS=-24V, VGS=0V
-1
uA
VGS=-20V, ID=-20A
VGS=-10V, ID=-20A
VGS=-4.5V, ID=-10A
VDS=-5V,ID=-20A
ISD=-1A, VGS=0V
7.5
8.5
14
9
Drain-Source On-Resistance
RDS(ON)
12
25
mΩ
Forward Transconductance
gfs
30
S
V
Diode Forward Voltage
Maximum Body-Diode
Continuous Current
VSD
-0.72 -1.0
IS
-55
A
Switching
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Qg
Qgs
40
47.2
10
55
VDS=-15V, VGS=-10V, ID=-20A
nC
nS
Qgd
20.4
12.4
25.6
td(on)
td(off)
VGS=-10V, RGEN=3Ω, VDS=-15V,
RL=0.75Ω
Turn-Off Time
Dynamic
Input Capacitance
Ciss
3076 3500
603
Output Capacitance
REVERSE Transfer
Capacitance
Coss
VGS=0V, VDS=-15V, f=1MHz
pF
Crss
402
523
Note: 1. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment
with TA=25°C. The value in any given application depends on the user's specific board design.
2. Repetitive rating, pulse width limited by junction temperature.
3. The current rating is based on the t≤10s junction to ambient thermal resistance rating.
VER 1.2
2
ACE [ ACE TECHNOLOGY CO., LTD. ]
