ACE2302B
N-Channel Enhancement Mode MOSFET
Description
The ACE2302B uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V while retaining a 12V V
GS(MAX)
rating. This device is suitable
for use as a uni-directional or bi-directional load switch.
Features
V
DS
=20V
I
D
=6A (V
GS
=10V)
R
DS(ON)
=26mΩ (typ.) @ V
GS
=10V
R
DS(ON)
=28mΩ (typ.) @ V
GS
=4.5V
R
DS(ON)
=42mΩ (typ.) @ V
GS
=2.5V
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed)
Power Dissipation
T
A
=25℃
T
A
=25℃
T
A
=70℃
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
Max
20
±12
6
4.8
20
1.4
Unit
V
V
A
A
W
Operating temperature / storage temperature T
J
/T
STG
-55~150
℃
Packaging Type
SOT-23-3L
3
SOT-23-3L Description Function
1
2
3
1
2
G
S
D
Gate
Source
Drain
Ordering information
ACE2302B XX + H
Halogen - free
Pb - free
BM : SOT-23-3L
VER 1.2
1
ACE [ ACE TECHNOLOGY CO., LTD. ]
