ACE2302B
N-Channel Enhancement Mode MOSFET
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Test Conditions
Static
Min Typ Max Unit
Drain-source breakdown voltage V(BR)DSS
VGS=0V, ID=250µA
VDS=20V, VGS=0V
VGS=VDS, IDS=250µA
VGS=±12V, VDS=0V
VGS=10V, ID=6A
20
24
V
µA
V
Zero gate voltage drain current
Gate threshold voltage
Gate leakage current
IDSS
VGS(th)
IGSS
1
1
0.6 0.74
100 nA
19.5
22.6
31
26
Drain-source on-state resistance RDS(ON)
VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
VDS=10V, ID=6A
28 mΩ
42
S
Forward transconductance
gFS
5
Diode forward voltage
Maximum body-diode continuous
current
VSD
ISD=1.7A, VGS=0V
0.78
1
V
IS
1.7
A
Switching
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Qg
Qgs
Qgd
td(on)
Tr
6.3
1.7
1.4
8.1
2.2
1.8
VGS=4.5V, VDS=10V,
ID=6A
nC
ns
10.4 20.8
4.4 8.8
27.4 54.8
VGS=10V, ID=1A
RG=6Ω, VGS=4.5V
td(off)
Tf
4.2
8.4
Dynamic
Input capacitance
Output capacitance
Ciss
Coss
Crss
522.3
98.5
74.7
VGS=0V, VDS=8V,
f=1.0MHz
pF
Reverse transfer capacitance
Note :
1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
2. Repetitive rating, pulse width limited by junction temperature.
3. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
VER 1.2
2
ACE [ ACE TECHNOLOGY CO., LTD. ]
