ACE4444B
N-Channel Enhancement Mode Field Effect Transistor
Description
The ACE4444B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
V
DS
(V)=30V
I
D
=20A (V
GS
=10V)
R
DS(ON)
＜5.5mΩ
(V
GS
=10V)
R
DS(ON)
＜8.5mΩ
(V
GS
=4.5V)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous) *AC
T
A
=25
O
C
T
A
=70
O
C
T
A
=25
O
C
T
A
=70
O
C
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
Max
30
±20
20
17
80
3
2.1
W
O
Unit
V
V
A
Drain Current (Pulse) *B
Power Dissipation
Operating and Storage Temperature Range
T
J,
T
STG
-55 to 150
C
Packaging Type
SOP-8
VER 1.2
1
ACE [ ACE TECHNOLOGY CO., LTD. ]
