ACE4444B
N-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE4444B XX + H
Halogen - free
Pb - free
FM : SOP-8
Electrical Characteristics
T
A
=25
O
C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous
Current
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V
(BR)DSS
I
DSS
I
GSS
R
DS(ON)
V
GS(th)
g
FS
V
SD
I
S
Switching
Q
g
Q
gs
Q
gd
T
d(on)
t
f
t
d(off)
t
f
Dynamic
C
iss
C
oss
C
rss
V
DS
=15V, V
GS
=0V
f=1MHz
3234.38
456.44
329.12
pF
V
DS
=15V, V
GS
=10V
R
GEN
=3Ω, R
L
=0.75Ω
V
DS
=15V, I
D
=20A
V
GS
=4.5V
28.5
8.1
12
19
9.44
58.84
8.68
37
10.5
15.6
38
18.88
117.68
17.36
ns
nC
Conditions
Static
V
GS
=0V, I
D
=250uA
V
DS
=24V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=15A
V
DS
=V
GS
, I
DS
=250uA
V
DS
=5V, I
D
=20A
I
SD
=1A, V
GS
=0V
1
5.1
7.4
1.8
100
0.76
1.0
4
30
1
100
5.5
8.5
3
V
uA
nA
mΩ
V
S
V
A
Min.
Typ.
Max.
Unit
Note: A. The value of R
θJA
is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with T
A
=25°C. The value in any given application depends on the user's specific board design.
B. Repetitive rating, pulse width limited by junction temperature.
C. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
VER 1.2
2
ACE [ ACE TECHNOLOGY CO., LTD. ]
