ACE4614B
30V Complementary Enhancement Mode Field Effect Transistor
Description
The ACE4614B uses advanced trench technology MOSFETs to provide excellent R
DS(ON)
and low gate
charge. The complementary MOSFETs may be used in inverter and other applications.
Features
N-channel
V
DS
=30V
I
D
=9A
R
DS(ON)
<14mΩ(V
GS
=10V)
R
DS(ON)
<22mΩ(V
GS
=4.5V)
P-channel
V
DS
=-30V
I
D
=-8A
R
DS(ON)
<20mΩ(V
GS
=-10V)
R
DS(ON)
<35mΩ(V
GS
=-4.5V)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous) * AC
T
A
=25
O
C
T
A
=70
O
C
T
A
=25
O
C
T
A
=70
O
C
Symbol N-channel P-channel Unit
V
DSS
V
GSS
I
D
I
DM
P
D
30
±20
9
7.2
40
2
1.3
-30
±20
-8
-6.4
-40
2
1.3
W
O
V
V
A
Drain Current (Pulse) * B
Power Dissipation
Operating and Storage Temperature Range T
J,
T
STG
-55 to 150 -55 to 150
C
Packaging Type
SOP-8
VER 1.2
1
ACE [ ACE TECHNOLOGY CO., LTD. ]
