ACE4614B
30V Complementary Enhancement Mode Field Effect Transistor
Ordering information
ACE4614B XX + H
Halogen - free
Pb - free
FM : SOP-8
N-channel Electrical Characteristics
T
A
=25
O
C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous
Current
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Note.
1.
The value of R
θJA
is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25°C. The value in any given application depends on the user's specific board design.
2.
3.
Repetitive rating, pulse width limited by junction temperature.
The current rating is based on the t≤10s junction to ambient thermal resistance rating.
Symbol
V
(BR)DSS
I
DSS
I
GSS
R
DS(ON)
V
GS(th)
g
FS
V
SD
I
S
Conditions
Static
V
GS
=0V, I
D
=250uA
V
DS
=30V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
D
=10A
V
GS
=4.5V, I
D
=10A
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=10A
I
SD
=1A, V
GS
=0V
Min.
30
Typ.
Max.
Unit
V
1
100
12
16.5
1.4
2
20
0.74
1.0
2.6
14
22
3
uA
nA
mΩ
V
S
V
A
Switching
Q
g
Q
gs
Q
gd
T
d(on)
t
f
t
d(off)
t
f
Dynamic
C
iss
C
oss
C
rss
V
DS
=15V, V
GS
=0V
f=1MHz
886.01
151
75.77
pF
V
DS
=15V,R
GEN
=6Ω,
V
GS
=10V
R
L
=15Ω
V
DS
=15V, I
D
=10A
V
GS
=5V
7.65
2.82
2.49
13.92
2.64
31.4
3.28
9.95
3.67
3.24
27.84
5.28
62.8
6.56
ns
nC
VER 1.2
2
ACE [ ACE TECHNOLOGY CO., LTD. ]
