AD586
The following specifications are tested at the die level for AD586JCHIPS. These die are probed at 25؇C
only. (T = +25؇C, V = +15 V unless otherwise noted)
DlE SPECIFlCATIONS
A
IN
AD 586JCH IP S
P aram eter
Min
Typ
Max
Units
Output Voltage
Gain Adjustment
4.980
+6
–2
5.020
V
%
%
Line Regulation
10.8 V < + VIN < 36 V
Load Regulation
100
±µV/V
Sourcing 0 < IOUT < 10 mA
Sinking –10 < IOUT < 0 mA
Quiescent Current
100
400
3
µV/mA
µV/mA
mA
Short-Circuit Current-to-Ground
60
mA
NOT ES
1Both VOUT pads should be connected to the output.
D ie Thickness: T he standard thickness of Analog Devices Bipolar dice is 24 mils ± 2 mils.
D ie D im ensions: T he dimensions given have a tolerance of ±2 mils.
Backing: T he standard backside surface is silicon (not plated). Analog Devices does not
recommend gold-backed dice for most applications.
E dges: A diamond saw is used to separate wafers into dice thus providing perpendicular
edges half-way through the die.
In contrast to scribed dice, this technique provides a more uniform die shape and size. T he
perpendicular edges facilitate handling (such as tweezer pick-up) while the uniform shape
and size simplifies substrate design and die attach.
Top Sur face: T he standard top surface of the die is covered by a layer of glassivation. All
areas are covered except bonding pads and scribe lines.
Sur face Metalization: T he metalization to Analog Devices bipolar dice is aluminum.
Minimum thickness is 10,000Å.
Bonding P ads: All bonding pads have a minimum size of 4 mils by 4 mils. T he passivation
windows have 3.5 mils by 3.5 mils minimum.
O RD ERING GUID E
Initial
Error
Tem perature
Coefficient
Tem perature
Range
P ackage
O ption2
Model1
AD586JN
AD586JQ
AD586JR
20 mV
20 mV
20 mV
5 mV
5 mV
5 mV
2.5 mV
2.5 mV
2 mV
25 ppm/°C
25 ppm/°C
25 ppm/°C
15 ppm/°C
15 ppm/°C
15 ppm/°C
5 ppm/°C
5 ppm/°C
2 ppm/°C
15 ppm/°C
5 ppm/°C
5 ppm/°C
20 ppm/°C
10 ppm/°C
25 ppm/°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
–40°C to +85°C
–40°C to +85°C
0°C to +70°C
–55°C to +125°C
–55°C to +125°C
0°C to +70°C
N-8
Q-8
SO-8
N-8
Q-8
SO-8
N-8
SO-8
N-8
SO-8
SO-8
Q-8
AD586KN
AD586KQ
AD586KR
AD586LN
AD586LR
AD586MN
AD586AR
AD586BR
AD586LQ
AD586SQ
AD586T Q
AD586JCHIPS
5 mV
2.5 mV
2.5 mV
10 mV
2.5 mV
20 mV
Q-8
Q-8
NOT ES
1For details on grade and package offerings screened in accordance with MIL-ST D-883, r efer to the Analog Devices Military
Products Databook or current AD586/883B data sheet.
2N = Plastic DIP; Q = Cerdip; SO = Small Outline IC (SOIC).
CAUTIO N
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD586 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. T herefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. C
–3–
ADI [ ADI ]
