DYNAMIC CHARACTERISTICS
Symbol
C
DC
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Characteristic
Drain-to-Case Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
f = 1 MHz
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 2.35Ω
MIN
TYP
MAX
2N7228
UNIT
12
2410
356
125
103
14
42
14
21
38
12
24
2900
pF
530
235
150
21
70
35
190
ns
nC
170
130
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
1
2
MIN
TYP
MAX
UNIT
Amps
Volts
ns
µC
12
48
1.7
296
3.5
1600
8.8
(Body Diode)
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Reverse Recovery Time (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/µs)
Reverse Recovery Charge (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/µs)
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
1
2
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
UNIT
K/W
3
0.83
31
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
Pulse Test: Pulse width < 380
µS,
Duty Cycle < 2%
1.0
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
0.5
D=0.5
0.2
0.1
0.05
0.1
0.05
0.02
0.01
0.01
0.005
SINGLE PULSE
Note:
PDM
t1
t2
t
Duty Factor D = 1/t2
Peak TJ = PDM x Z
θJC
+ TC
051-5015 Rev D
0.001
10
-5
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
-4
ADPOW [ ADVANCED POWER TECHNOLOGY ]
