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APT25GP90B 参数 Datasheet PDF下载

APT25GP90B图片预览
型号: APT25GP90B
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS 7 IGBT [POWER MOS 7 IGBT]
分类和应用: 晶体晶体管功率控制瞄准线双极性晶体管局域网
文件页数/大小: 6 页 / 180 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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TYPICAL PERFORMANCE CURVES
5,000
I
C
, COLLECTOR CURRENT (A)
120
Cies
100
80
60
40
20
0
APT25GP90B
C, CAPACITANCE ( F)
1,000
500
Coes
100
50
Cres
P
10
20
30
40
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
10
0
200
400
600
800
1000
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0
0.35
0.30
0.25
0.7
0.20
0.15
0.10
0.05
0
0.5
Note:
PDM
t1
t2
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
0.9
0.3
SINGLE PULSE
10
-4
0.1
0.05
10
-5
Peak TJ = PDM x Z
θJC
+ TC
Duty Factor D = t1/t2
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
RC MODEL
Junction
temp (°C)
0.131
Power
(watts)
0.168
Case temperature(°C)
0.154F
0.00852F
270
F
MAX
, OPERATING FREQUENCY (kHz)
100
50
F
max
=
min(f
max1
, f
max 2
)
f
max1
=
T
J
= 125
°
C
T
C
= 75
°
C
D = 50 %
V
CE
= 600V
R
G
= 5
t
d (on)
0.05
+
t
r
+
t
d(off )
+
t
f
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
f
max 2
=
P
diss
=
P
diss
P
cond
E
on 2
+
E
off
25
35
45
55
65
75
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
10
T
J
T
C
R
θ
JC
5
15
050-7477
Rev D
7-2004