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APT25GP90B 参数 Datasheet PDF下载

APT25GP90B图片预览
型号: APT25GP90B
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS 7 IGBT [POWER MOS 7 IGBT]
分类和应用: 晶体晶体管功率控制瞄准线双极性晶体管局域网
文件页数/大小: 6 页 / 180 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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APT25GP90B
Gate Voltage
APT15DF100
10%
T = 125°C
J
t
d(on)
Drain Current
t
r
90%
5%
10%
DrainVoltage
5%
V
CC
I
C
V
CE
A
Switching Energy
D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
V
TEST
90%
Gate Voltage
t
d(off)
90%
DrainVoltage
*DRIVER SAME TYPE AS D.U.T.
T
J
= 125°C
A
V
CE
100uH
I
C
V
CLAMP
A
DRIVER*
D.U.T.
B
t
f
10%
0
Drain Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, E
ON1
Test Circuit
T0-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
Collector
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
F
max
=
2.87 (.113)
, f
max 2
)
min(f
max1
0.05
f
max1
=
(.065)
1.65
t
d
(.084)
2.13
(on )
+
t
r
+
t
d(off )
+
t
f
f
max 2
=
P
diss
=
P
diss
Gate
P
cond
Collector
E
+
E
Emitter
on 2
off
3.12 (.123)
7-2004
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Rev D
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
T
J
T
C
R
θ
JC
050-7477
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.