TYPICAL PERFORMANCE CURVES
®
APT45GP120JDQ2
1200V
APT45GP120JDQ2
POWER MOS 7 IGBT
®
E
G
C
E
The POWER MOS 7
®
IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• 100 kHz operation @ 800V, 16A
• 50 kHz operation @ 800V, 30A
• RBSOA Rated
SO
2
T-
27
ISOTOP
®
"UL Recognized"
file # E145592
C
G
E
MAXIMUM RATINGS
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
RBSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
All Ratings: T
C
= 25°C unless otherwise specified.
APT45GP120JDQ2
UNIT
Volts
1200
±30
75
34
170
170A @ 960V
329
-55 to 150
300
Amps
@ T
C
= 150°C
Reverse Biad Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 750µA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1mA, T
j
= 25°C)
MIN
TYP
MAX
Units
1200
3
4.5
3.3
3.0
750
2
2
6
3.9
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 45A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 45A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25°C)
Volts
I
CES
I
GES
Gate-Emitter Leakage Current (V
GE
= ±20V)
±100
nA
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-7445
APT Website - http://www.advancedpower.com
Rev A
6-2005
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125°C)
µA
3000
ADPOW [ ADVANCED POWER TECHNOLOGY ]
