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APT45GP120JDQ2 参数 Datasheet PDF下载

APT45GP120JDQ2图片预览
型号: APT45GP120JDQ2
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS 7 IGBT [POWER MOS 7 IGBT]
分类和应用: 晶体晶体管功率控制瞄准线双极性晶体管局域网
文件页数/大小: 9 页 / 457 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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TYPICAL PERFORMANCE CURVES
10,000
C
ies
I
C
, COLLECTOR CURRENT (A)
180
160
140
120
100
80
60
40
20
APT45GP120JDQ2
C, CAPACITANCE ( F)
1,000
C
oes
100
P
C
res
0
10
20
30
40
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
10
0 100 200 300 400 500 600 700 800 900 1000
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Reverse Bias Safe Operating Area
0
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
10
-5
0.5
Note:
0.9
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
0.7
PDM
0.3
t1
t2
0.1
0.05
10
-4
SINGLE PULSE
Duty Factor D =
1
/
t2
Peak TJ = PDM x Z
θJC
+ TC
t
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
90
F
MAX
, OPERATING FREQUENCY (kHz)
RC MODEL
Junction
temp. (°C)
50
0.0339
0.0004
10
5
T = 125
°
C
J
T = 75
°
C
C
D = 50 %
V
= 800V
CE
R = 5Ω
G
Power
(watts)
0.0806
0.0269
= min (f
max
, f
max2
)
0.05
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
max
F
f
max2
=
P
diss
=
0.265
Case temperature. (°C)
0.608
P
diss
- P
cond
E
on2
+ E
off
T
J
- T
C
R
θJC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
20
30
40
50
60
70
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
1
10
050-7445
Rev A
6-2005