DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Symbol
I
S
I
SM
V
SD
dv
/
dt
APT5010JFLL
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 300V
I
D
= 41A @ 25°C
RESISTIVE SWITCHING
V
GS
= 15V
V
DD
= 300V
I
D
= 41A @ 25°C
6
INDUCTIVE SWITCHING @ 25°C
V
DD
= 333V, V
GS
= 15V
INDUCTIVE SWITCHING @ 125°C
V
DD
= 333V V
GS
= 15V
I
D
= 41A, R
G
= 5Ω
I
D
= 41A, R
G
= 5Ω
R
G
= 0.6Ω
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
MIN
TYP
MAX
UNIT
pF
4360
895
60
95
24
50
11
13
25
3
485
455
755
530
MIN
TYP
MAX
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
1
2
dt
6
nC
ns
µ
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
V/ns
ns
µC
Amps
41
164
1.3
15
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
MIN
(Body Diode)
(V
GS
= 0V, I
S
= -41A)
5
dv
/
t
rr
Q
rr
I
RRM
Reverse Recovery Time
(I
S
= -41A,
di
/
dt
= 100A/µs)
Reverse Recovery Charge
(I
S
= -41A,
di
/
dt
= 100A/µs)
Peak Recovery Current
(I
S
= -41A,
di
/
dt
= 100A/µs)
Characteristic
Junction to Case
Junction to Ambient
280
600
2.28
6.41
15.7
23.6
TYP
MAX
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
UNIT
°C/W
0.33
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.35
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
4 Starting T
j
= +25°C, L = 1.65mH, R
G
= 25Ω, Peak I
L
= 41A
5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
IS
≤
-
ID
41A
di
/
dt
≤
700A/µs
VR
≤
VDSS TJ
≤
150
°
C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.30
0.25
0.20
0.9
0.7
0.5
0.15
0.10
0.05
0
0.3
Note:
PDM
t1
t2
t
Duty Factor D = 1/t2
Peak TJ = PDM x Z
θJC
+ TC
050-7029 Rev E
9-2004
0.1
0.05
10
-5
10
-4
SINGLE PULSE
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
ADPOW [ ADVANCED POWER TECHNOLOGY ]
