176
100
I
D
, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
20,000
10,000
APT5010JFLL
Ciss
100µS
C, CAPACITANCE (pF)
1,000
Coss
10
1mS
100
Crss
1
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
10
100
500
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
10mS
10
0
10
20
30
40
50
16
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
I
= 41A
100
12
VDS=100V
8
VDS=250V
VDS=400V
TJ =+150°C
TJ =+25°C
10
4
0
0
20
40
60
80
100
120
140
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
80
70
60
t
d(on)
and t
d(off)
(ns)
V
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
100
V
DD
G
= 333V
t
d(off)
90
80
R
= 5Ω
T = 125°C
J
L = 100µH
t
r
and t
f
(ns)
50
40
30
20
10
DD
G
= 333V
70
60
50
40
30
t
d(on)
20
10
t
f
t
r
R
= 5Ω
T = 125°C
J
L = 100µH
0
10
40
50
60
70
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
G
20
30
40
50
60
70
I
D
(A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2000
V
I
DD
0
10
20
30
1500
= 333V
= 333V
R
= 5Ω
D
J
= 41A
L = 100µH
E
ON
includes
diode reverse recovery.
SWITCHING ENERGY (µJ)
1200
E
on
and E
off
(µJ)
T = 125°C
J
T = 125°C
1500
E
on
L = 100µH
E
ON
includes
diode reverse recovery.
E
off
900
1000
E
on
600
9-2004
300
500
050-7029 Rev E
E
off
20
30
10 15 20 25 30 35 40 45 50
R
G
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
40
50
60
70
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
10
ADPOW [ ADVANCED POWER TECHNOLOGY ]
