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APT50M60JVR 参数 Datasheet PDF下载

APT50M60JVR图片预览
型号: APT50M60JVR
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS V FREDFET [POWER MOS V FREDFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 5 页 / 167 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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Typical Performance Curves
I
D
, DRAIN CURRENT (AMPERES)
Junction
temp. (°C)
RC MODEL
200
180
160
140
120
100
80
60
40
20
0
APT50M60JVR
VGS =15 & 10V
8V
0.0516
0.0260F
7.5V
7V
Power
(watts)
0.149
0.448F
6.5V
6V
5.5V
0.0198
Case temperature. (°C)
42.3F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
140
I
D
, DRAIN CURRENT (AMPERES)
120
100
80
60
40
20
0
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
V
GS
NORMALIZED TO
= 10V @ 31.5A
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
TJ = -55°C
TJ = +25°C
TJ = +125°C
0
1
2
3
4
5
6
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
0
70
60
50
40
30
20
10
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
1.15
1.10
1.05
1.00
0.95
0.90
0.85
20
40
60
80 100 120 140 160
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
I
D
, DRAIN CURRENT (AMPERES)
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I
D
25
-50 -25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
= 31.5A
V
GS
= 10V
2.0
1.5
1.0
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
0.5
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25
0
25
50
75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7250 Rev A
5-2004