252
I
D
, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
20,000
10,000
C, CAPACITANCE (pF)
APT50M60JVR
Ciss
100
50
100µS
Coss
1,000
Crss
10
5
TC =+25°C
TJ =+150°C
SINGLE PULSE
1mS
10mS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
= 63A
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
1
10
100
500
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
1
0
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
100
12
VDS = 100V
8
VDS = 250V
TJ =+25°C
10
4
VDS = 400V
100 200 300 400 500 600 700 800
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
700
600
500
400
300
200
0
0
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
250
V
DD
G
1
= 333V
R
= 5Ω
t
d(off)
V
DD
G
200
T = 125°C
J
L = 100µH
t
d(on)
and t
d(off)
(ns)
t
f
= 333V
R
= 5Ω
T = 125°C
J
L = 100µH
t
r
and t
f
(ns)
150
100
50
100
0
10
t
d(on)
70
90
110
130
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
DD
G
t
r
30
50
70
90
110
130
I
D
(A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
25,000
V
I
DD
0
10
30
50
7,000
6,000
SWITCHING ENERGY (µJ)
V
= 333V
= 333V
R
= 5Ω
D
J
= 63A
T = 125°C
J
5,000
4,000
3,000
2,000
1,000
L = 100µH
E
ON
includes
diode reverse recovery.
SWITCHING ENERGY (µJ)
20,000
T = 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
E
off
15,000
10,000
E
on
5-2004
E
off
E
on
5,000
050-7250 Rev A
70
90
110
130
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
10
30
50
10 15 20 25 30 35 40 45 50
R
G
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
ADPOW [ ADVANCED POWER TECHNOLOGY ]
