DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT60GT60JR
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.66V
CES
I
C
= I
C2
Resistive Switching (25°C)
V
GE
= 15V
V
CC
= 0.66V
CES
I
C
= I
C2
R
G
= 5W
MIN
TYP
MAX
UNIT
3200
310
180
280
120
20
14
55
190
140
25
ns
nC
pF
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Inductive Switching (150°C)
V
CLAMP
(Peak) = 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 5W
T
J
= +150°C
75
300
95
1.9
2.4
4.3
ns
mJ
Inductive Switching (25°C)
V
CLAMP
(Peak) = 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 5W
T
J
= +25°C
V
CE
= 20V, I
C
= I
C2
25
75
260
90
3.8
6
mJ
S
ns
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
QJC
R
QJA
W
T
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
UNIT
°C/W
0.33
20
1.03
oz
gm
Package Weight
29.2
10
lb•in
N•m
Torque
052-6221 Rev A 9-2000
Mounting Torque (
Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine
)
1.5
1
2
3
Repetitive Rating: Pulse width limited by maximum junction temperature.
I
C
= I
C2
, R
GE
= 25
W
, L = 100µH, T
j
= 25°C
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.