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APT8075BVFR 参数 Datasheet PDF下载

APT8075BVFR图片预览
型号: APT8075BVFR
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS V是新一代高压N沟道增强型功率MOSFET 。 [Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲高压局域网
文件页数/大小: 4 页 / 65 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT8075BVFR
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 1.6Ω
MIN
TYP
MAX
UNIT
pF
2600
270
135
130
13
66
12
11
45
8
3120
380
200
195
20
100
24
22
70
16
ns
nC
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
dv
/
dt
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
1
2
MIN
TYP
MAX
UNIT
Amps
Volts
V/ns
ns
12
48
1.3
18
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
(Body Diode)
(V
GS
= 0V, I
S
= -I
D
[Cont.])
5
Peak Diode Recovery
dv
/
dt
t
rr
Q
rr
I
RRM
Reverse Recovery Time
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/µs)
Reverse Recovery Charge
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/µs)
Peak Recovery Current
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/µs)
160
305
1.8
6.0
11
18
250
525
µC
Amps
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
UNIT
°C/W
0.48
40
3
See MIL-STD-750 Method 3471
4
Starting T = +25°C, L = 4.16mH, R = 25
, Peak I = 25A
j
G
L
5
I - -I [Cont.],
di
/
= 100A/µs, V
S
D
DD
- V
DSS
, T
j
- 150°C, R
G
= 2.0
,
dt
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
V
R
= 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.5
D=0.5
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
0.2
0.1
0.05
0.1
0.05
0.02
0.01
0.005
0.01
SINGLE PULSE
Note:
PDM
t1
t2
t
Duty Factor D = 1/t2
Peak TJ = PDM x Z
θJC
+ TC
050-5632 Rev -
1-2005
0.001
10
-5
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
-4