APT8075BVFR
50
I
D
, DRAIN CURRENT (AMPERES)
10µS
100µS
OPERATION HERE
LIMITED BY RDS (ON)
10,000
5,000
C, CAPACITANCE (pF)
10
5
1mS
Ciss
1,000
Coss
500
10mS
1
.5
TC =+25°C
TJ =+150°C
SINGLE PULSE
100mS
DC
Crss
.1
1
5 10
50 100
800
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D
D
.01
.1
1
10
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
100
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
50
16
VDS=100V
VDS=250V
TJ =+150°C
10
5
TJ =+25°C
12
VDS=400V
8
1
.5
4
50
100
150
200
250
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
.1
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
Drain
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
1-2005
2.21 (.087)
2.59 (.102)
050-5632 Rev -
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
ADPOW [ ADVANCED POWER TECHNOLOGY ]
