General Description, Cont’d
,
accomplished by chip Enable (CE) and
Output Enable (OE) being logically active.
Access time grades of 80nS, 100nS and
120nS maximum are standard.
The ACT–F1M32 is packaged in a
hermetically sealed co-fired ceramic 68
lead, .94" SQ Ceramic Gull Wing CQFP
package. This allows operation in a military
environment temperature range of -55°C to
+125°C.
The ACT–F1M32 provides program and
erase capability at 5V or 12V and allows
reads with Vcc at 5V or 3.3V(Not tested).
Since many designs read from flash
memory a large percentage of the time,
read operation using 3.3V can provide
great power savings. Consult the factory for
3.3V tested parts. In applications where
read performance is critical, faster access
times are obtainable with the 5V V
CC
part
detailed herein.
For program and erase operations, 5V
Vpp operation eliminates the need for in
system voltage converters. The 12V Vpp
operation provides reduced (approx 60%)
program and erase times where 12V is
available in the system. For design
simplicity, however, connect Vcc and Vpp
to the same 5V ±10% source.
Each block can be independently
erased and programmed 100,000 times at
commercial temperature or 10,000 times at
extended temperature.
The boot block is located at either the
bottom (Standard) or the top (Special
Order) of the address map in order to
accommodate different microprocessor
protocols for boot code location. Locking
and unlocking of the boot block is controlled
by WP and/or RP.
Intel's boot block architecture provides a
flexible solution for the different design
needs of various applications. The
asymmetrically-blocked
memory
map
allows the integration of several memory
components into a single flash device. The
boot block provides a secure boot PROM;
the parameter blocks can emulate
EEPROM functionality for parameter store
with proper software techniques; and the
main blocks provide code and data storage
with access times fast enough to execute
code
in
place,
decreasing
RAM
requirements.
For Detail Information regarding the
operation of the 28F800BV Memory die,
see the Intel datasheet (order number
290539-002).
SmartDie™ is a Trademark of Intel Corporation
Aeroflex Circuit Technology
2
SCD1661B REV A 1/16/97 Plainview NY (516) 694-6700
AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
