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ACT-F1M32B-120F14Q 参数 Datasheet PDF下载

ACT-F1M32B-120F14Q图片预览
型号: ACT-F1M32B-120F14Q
PDF下载: 下载PDF文件 查看货源
内容描述: ACT- F1M32高速32兆引导块闪存多芯片模块 [ACT-F1M32 High Speed 32 Megabit Boot Block FLASH Multichip Module]
分类和应用: 闪存内存集成电路
文件页数/大小: 9 页 / 152 K
品牌: AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
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AC Characteristics – Write/Erase/Program Operations, CE Controlled
(T
A
= -55°C to +125°C, V
CC
= +4.5V to + 5.5V(5V Operation), or +3.0V to +3.6V(3.3V Operation), Unless otherwise specified)
Symbol
Parameter
JEDEC
Standard
t
AVAV
+3.3V
V
CC
(2)
Typical
120nS
Min Max
120
1.5
0
200
200
90
70
90
0
0
0
20
6
0.3
0.3
0.6
0
0
200
80nS
+4.5V to +5.5V V
CC
Units
100nS
Min Max
100
.45
0
100
100
60
60
60
0
0
0
20
6
0.3
0.3
0.6
0
0
100
100
120nS
Min Max
120
.45
0
100
100
60
60
60
0
0
0
20
6
0.3
0.3
0.6
0
0
100
nS
µS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
µS
Sec
Sec
Sec
nS
nS
nS
Min Max
80
.45
0
100
100
60
60
60
0
0
0
20
6
0.3
0.3
0.6
0
0
Write Cycle Time
RP High Recovery to CE Low
WE Setup to CE Going Low
Boot Block Unlock Setup to CE Going High
V
PP
Setup to CE Going High
(1)
Address Setup to CE Going High
Data Setup to CE Going High
CE Pulse Width
Data Hold Time from CE High
Address Hold Time from CE High
WE Hold Time from CE High
CE Pulse Width High
Duration of Word Write Operation
(1)
(1)
t
PHEL
t
WLEL
t
PHHEH
t
VPEH
t
AVEH
t
DVEH
t
ELEH
t
EHDX
t
EHAX
t
EHWH
t
EHEL
(x32)
(1)
t
EHQV
1
t
EHQV
2
t
EHQV
3
t
EHQV
4
t
QVVL
t
QVPH
t
PHBR
Duration of Erase Operation (Boot)
(1)
Duration of Erase Operation (Parameter)
Duration of Erase Operation (Main)
V
PP
Hold from Valid SRD
(1)
RP V
HH
Hold from Valid SRD
(1)
Boot Block Lock Delay
(1)
(1)
NOTES:
1. Sampled, but not 100% tested.
2. Performance at V
CC
= +4.5V to +5.5V is guaranteed. Performance at V
CC
= +3.3V is typical (Not Tested).
AC Characteristics – Read Only Operations
(T
A
= -55°C to +125°C, V
CC
= +4.5V to + 5.5V(5V Operation), or +3.0V to +3.6V(3.3V Operation), Unless otherwise specified)
Symbol
Parameter
JEDEC
Standard
t
AVAV
t
AVQV
t
ELQV
t
PHQV
t
GLQV
t
ELQX
t
EHQZ
t
GLQX
t
GHQZ
t
OH
+3.3V
V
CC
(2)
Typical
120nS
Min Max
120
120
120
1.5
65
0
55
0
45
0
0
0
30
0
30
80nS
Min Max
80
80
80
+4.5V to +5.5V V
CC
Units
100nS
Min Max
100
100
100
.45
40
0
30
0
30
0
0
0
30
0
30
120nS
Min Max
120
120
120
.45
40
nS
nS
nS
µS
nS
nS
nS
nS
nS
nS
Read Cycle Time
Address to Output Delay
CE to Output Delay
RP to Output Delay
OE to Output Delay
CE to Output in Low Z
(1)
CE to Output in High Z
(1)
OE to Output in Low Z
(1)
OE to Output in High Z
(1)
Output Hold from Address, CE, or OE Change,
Whichever Occurs First
(1)
.45
40
Notes:
1. Guaranteed by design, but not tested.
2. Performance at V
CC
= +4.5V to +5.5V is guaranteed. Performance at V
CC
= +3.3V is typical (Not Tested).
Aeroflex Circuit Technology
5
SCD1661B REV A 1/16/97 Plainview NY (516) 694-6700