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ACT-F1M32B-120F14T 参数 Datasheet PDF下载

ACT-F1M32B-120F14T图片预览
型号: ACT-F1M32B-120F14T
PDF下载: 下载PDF文件 查看货源
内容描述: ACT- F1M32高速32兆引导块闪存多芯片模块 [ACT-F1M32 High Speed 32 Megabit Boot Block FLASH Multichip Module]
分类和应用: 闪存
文件页数/大小: 9 页 / 152 K
品牌: AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
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AC Characteristics – Write/Erase/Program Operations, CE Controlled  
(TA = -55°C to +125°C, VCC = +4.5V to + 5.5V(5V Operation), or +3.0V to +3.6V(3.3V Operation), Unless otherwise specified)  
+3.3V  
(2)  
VCC  
+4.5V to +5.5V VCC  
100nS  
Symbol  
Typical  
120nS  
Min Max  
120  
Parameter  
Units  
JEDEC  
Standard  
80nS  
120nS  
Min Max  
120  
Min Max  
Min Max  
tAVAV  
80  
.45  
0
100  
.45  
0
nS  
µS  
nS  
nS  
nS  
nS  
nS  
nS  
nS  
nS  
nS  
nS  
µS  
Sec  
Sec  
Sec  
nS  
nS  
nS  
Write Cycle Time  
tPHEL  
1.5  
0
.45  
0
RP High Recovery to CE Low  
WE Setup to CE Going Low  
Boot Block Unlock Setup to CE Going High  
VPP Setup to CE Going High (1)  
Address Setup to CE Going High  
Data Setup to CE Going High  
CE Pulse Width  
tWLEL  
tPHHEH  
tVPEH  
tAVEH  
tDVEH  
tELEH  
(1)  
200  
200  
90  
70  
90  
0
100  
100  
60  
60  
60  
0
100  
100  
60  
60  
60  
0
100  
100  
60  
60  
60  
0
tEHDX  
tEHAX  
tEHWH  
tEHEL  
Data Hold Time from CE High  
Address Hold Time from CE High  
WE Hold Time from CE High  
0
0
0
0
0
0
0
0
20  
6
20  
6
20  
6
20  
6
CE Pulse Width High  
(1)  
tEHQV1  
tEHQV2  
tEHQV3  
tEHQV4  
tQVVL  
tQVPH  
tPHBR  
Duration of Word Write Operation  
Duration of Erase Operation (Boot)  
(x32)  
(1)  
0.3  
0.3  
0.6  
0
0.3  
0.3  
0.6  
0
0.3  
0.3  
0.6  
0
0.3  
0.3  
0.6  
0
(1)  
Duration of Erase Operation (Parameter)  
(1)  
Duration of Erase Operation (Main)  
VPP Hold from Valid SRD (1)  
RP VHH Hold from Valid SRD (1)  
Boot Block Lock Delay (1)  
0
0
0
0
200  
100  
100  
100  
NOTES:  
1. Sampled, but not 100% tested.  
2. Performance at VCC = +4.5V to +5.5V is guaranteed. Performance at VCC = +3.3V is typical (Not Tested).  
AC Characteristics – Read Only Operations  
(TA = -55°C to +125°C, VCC = +4.5V to + 5.5V(5V Operation), or +3.0V to +3.6V(3.3V Operation), Unless otherwise specified)  
+3.3V  
(2)  
VCC  
+4.5V to +5.5V VCC  
Symbol  
Typical  
120nS  
Min Max  
120  
Parameter  
Units  
JEDEC  
Standard  
80nS  
Min Max  
80  
100nS  
Min Max  
100  
120nS  
Min Max  
120  
tAVAV  
tAVQV  
tELQV  
tPHQV  
tGLQV  
tELQX  
tEHQZ  
tGLQX  
tGHQZ  
nS  
nS  
nS  
µS  
nS  
nS  
nS  
nS  
nS  
Read Cycle Time  
120  
80  
100  
120  
Address to Output Delay  
CE to Output Delay  
120  
80  
100  
120  
1.5  
.45  
.45  
.45  
RP to Output Delay  
65  
40  
40  
40  
OE to Output Delay  
CE to Output in Low Z (1)  
CE to Output in High Z (1)  
OE to Output in Low Z (1)  
OE to Output in High Z (1)  
Output Hold from Address, CE, or OE Change,  
0
0
0
0
55  
30  
30  
30  
0
0
0
0
45  
30  
30  
30  
tOH  
0
0
0
0
nS  
(1)  
Whichever Occurs First  
Notes:  
1. Guaranteed by design, but not tested.  
2. Performance at VCC = +4.5V to +5.5V is guaranteed. Performance at VCC = +3.3V is typical (Not Tested).  
Aeroflex Circuit Technology  
5
SCD1661B REV A 1/16/97 Plainview NY (516) 694-6700