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ACT-SF128K16N-39F18M 参数 Datasheet PDF下载

ACT-SF128K16N-39F18M图片预览
型号: ACT-SF128K16N-39F18M
PDF下载: 下载PDF文件 查看货源
内容描述: ACT- SF128K16高速128Kx16 SRAM /闪存多芯片模块 [ACT-SF128K16 High Speed 128Kx16 SRAM/FLASH Multichip Module]
分类和应用: 闪存静态存储器
文件页数/大小: 11 页 / 171 K
品牌: AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
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AC Waveforms for Flash Memory Read Operations
t
RC
Addresses
Addresses Stable
t
ACC
FCE
t
DF
OE
t
OE
FWE
t
CE
Outputs
High Z
t
OH
Output Valid
High Z
Write/Erase/Program
Operation for Flash Memory, FWE Controlled
Data Polling
Addresses
5555H
t
WC
FCE
t
GHWL
OE
t
WP
FWE
t
CE
t
DH
AOH
Data
t
DS
PD
D7
D
OUT
t
OH
t
OE
t
WPH
t
DF
t
WHWH
1
t
AS
PA
t
AH
PA
t
RC
5.0V
t
CE
Notes:
1. PA is the address of the memory location to be programmed.
2. PD is the data to be programmed at byte address.
3. D7 is the 0utput of the complement of the data written to the deviced.
4. Dout is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
Aeroflex Circuit Technology
6
SCD1677 REV A 4/28/98 Plainview NY (516) 694-6700