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ACT-SF512K16N-37P7M 参数 Datasheet PDF下载

ACT-SF512K16N-37P7M图片预览
型号: ACT-SF512K16N-37P7M
PDF下载: 下载PDF文件 查看货源
内容描述: ACT- SF512K16高速512Kx16 SRAM /闪存多芯片模块 [ACT-SF512K16 High Speed 512Kx16 SRAM/FLASH Multichip Module]
分类和应用: 闪存静态存储器
文件页数/大小: 11 页 / 171 K
品牌: AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
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Flash AC Characteristics – Read Only Operations  
(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C)  
Symbol  
–60  
–70  
–90  
Parameter  
Units  
JEDEC Stand’d Min Max Min Max Min Max  
tAVAV  
tAVQV  
tELQV  
tGLQV  
tEHQZ  
tGHQZ  
tAXQX  
tRC  
tACC  
tCE  
tOE  
tDF  
60  
70  
90  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Read Cycle Time  
60  
60  
30  
20  
20  
70  
70  
35  
20  
20  
90  
90  
35  
20  
20  
Address Access Time  
Chip Enable Access Time  
Output Enable to Output Valid  
Chip Enable to Output High Z (1)  
Output Enable High to Output High Z(1)  
Output Hold from Address, CE or OE Change, Whichever is First  
Note 1. Guaranteed by design, but not tested  
tDF  
tOH  
0
0
0
Flash AC Characteristics – Write / Erase / Program Operations, FWE Controlled  
(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C)  
Symbol  
–60  
–70  
–90  
Parameter  
Units  
JEDEC Stand’d Min Max Min Max Min Max  
tAVAC  
tELWL  
tWC  
tCE  
60  
0
70  
0
90  
0
ns  
ns  
Write Cycle Time  
Chip Enable Setup Time  
Write Enable Pulse Width  
Address Setup Time  
tWLWH  
tAVWL  
tDVWH  
tWHDX  
tWLAX  
tWHWL  
tWHWH1  
tWHWH2  
tWP  
tAS  
40  
0
45  
0
45  
0
ns  
ns  
tDS  
40  
0
45  
0
45  
0
ns  
Data Setup Time  
tDH  
tAH  
tWPH  
ns  
Data Hold Time  
45  
20  
45  
20  
45  
20  
ns  
Address Hold Time  
ns  
Write Enable Pulse Width High  
Duration of Byte Programming Operation  
Sector Erase Time  
14 TYP 14 TYP 14 TYP  
µs  
30  
30  
30  
Sec  
µs  
tGHWL  
0
0
0
Read Recovery Time before Write  
Vcc Setup Time  
tVCE  
50  
50  
50  
µs  
50  
10  
50  
10  
50  
10  
Sec  
ns  
Chip Programming Time  
Chip Enable Hold Time  
Chip Erase Time  
1
tOEH  
tWHWH3  
120  
120  
120  
Sec  
1. Toggle and Data Polling only.  
Flash AC Characteristics – Write / Erase / Program Operations, FCE Controlled  
(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C)  
Symbol  
–60  
–70  
–90  
Parameter  
Units  
JEDEC Stand’d Min Max Min Max Min Max  
tAVAC  
tWLEL  
tELEH  
tWC  
tWS  
tCP  
60  
0
70  
0
90  
0
ns  
ns  
Write Cycle Time  
Write Enable Setup Time  
Chip Enable Pulse Width  
Address Setup Time  
Data Setup Time  
40  
0
45  
0
45  
0
ns  
tAVEL  
tAS  
ns  
tDVEH  
tEHDX  
tELAX  
tDS  
40  
0
45  
0
45  
0
ns  
tDH  
tAH  
tCPH  
ns  
Data Hold Time  
45  
20  
45  
20  
45  
20  
ns  
Address Hold Time  
tEHEL  
ns  
Chip Enable Pulse Width High  
Duration of Byte Programming  
Sector Erase Time  
tWHWH1  
tWHWH2  
14 TYP 14 TYP 14 TYP  
µs  
30  
30  
30  
Sec  
ns  
tGHEL  
0
0
0
Read Recovery Time  
Chip Programming Time  
Chip Erase Time  
50  
50  
50  
Sec  
Sec  
tWHWH3  
120  
120  
120  
5
Aeroflex Circuit Technology  
SCD1663 REV A 4/28/98 Plainview NY (516) 694-6700