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ACT-SF512K16N-37P7M 参数 Datasheet PDF下载

ACT-SF512K16N-37P7M图片预览
型号: ACT-SF512K16N-37P7M
PDF下载: 下载PDF文件 查看货源
内容描述: ACT- SF512K16高速512Kx16 SRAM /闪存多芯片模块 [ACT-SF512K16 High Speed 512Kx16 SRAM/FLASH Multichip Module]
分类和应用: 闪存静态存储器
文件页数/大小: 11 页 / 171 K
品牌: AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
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AC Waveforms for Flash Memory Read Operations  
tRC  
Addresses  
FCE  
Addresses Stable  
tACC  
tDF  
OE  
tOE  
FWE  
tCE  
tOH  
High Z  
High Z  
Outputs  
Output Valid  
Write/Erase/Program  
Operation for Flash Memory, FWE Controlled  
Data Polling  
Addresses  
5555H  
PA  
PA  
tRC  
tWC  
tAH  
tAS  
FCE  
OE  
tGHWL  
tWP  
tWHWH1  
tWPH  
FWE  
tCE  
tDF  
tOH  
tOE  
tDH  
AOH  
PD  
D7  
DOUT  
Data  
5.0V  
tDS  
tCE  
Notes:  
1. PA is the address of the memory location to be programmed.  
2. PD is the data to be programmed at byte address.  
3. D7 is the 0utput of the complement of the data written to the deviced.  
4. Dout is the output of the data written to the device.  
5. Figure indicates last two bus cycles of four bus cycle sequence.  
6
Aeroflex Circuit Technology  
SCD1663 REV A 4/28/98 Plainview NY (516) 694-6700