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ACT-S128K32C-020P2Q 参数 Datasheet PDF下载

ACT-S128K32C-020P2Q图片预览
型号: ACT-S128K32C-020P2Q
PDF下载: 下载PDF文件 查看货源
内容描述: 高速4兆位的SRAM多芯片模块 [High Speed 4 Megabit SRAM Multichip Module]
分类和应用: 内存集成电路静态存储器
文件页数/大小: 10 页 / 396 K
品牌: AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
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(4.5Vdc< V
CC
< 5.5Vdc, V
SS
= 0V, T
C
= -55°C to +125°C, Unless otherwise specified)
Parameter
Sym
Conditions
CE = V
IH
, OE = V
IH
,
f = 5 MHz, V
CC
= Max,
CMOS Compatible
I
OL
= 8 mA, V
CC
= Min
I
OH
= -4.0 mA, V
CC
= Min
2.4
–017 & –020 –025 & –035 –045 & –055
Units
Min Max
Min Max
Min Max
80
0.4
2.4
60
0.4
2.4
60
0.4
mA
V
V
DC Characteristics (Continued)
Standby Current
Output Low Voltage
Output High Voltage
I
SB
V
OL
V
OH
(V
CC
= 5.0V, V
SS
= 0V, T
C
= -55°C to +125°C)
Read Cycle
Parameter
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Hold from Address Change
Output Enable to Output Valid
Chip Enable to Output in Low Z*
Output Enable to Output in Low Z*
Chip Deselect to Output in High Z*
Output Disable to Output in High Z*
* Parameters guaranteed by design but not tested
AC Characteristics
Sym
t
RC
t
AA
t
ACE
t
OH
t
OE
t
CLZ
t
OLZ
t
CHZ
t
OHZ
–020
–017
Min Max Min Max
17
17
17
0
9
3
0
12
10
3
0
12
11
0
12
20
20
20
–025
–035
Min Max Min Max
25
25
25
0
15
3
0
12
12
3
0
15
15
0
20
35
35
35
–045
–055
Min Max Min Max
45
45
45
0
25
3
0
20
20
3
0
20
20
0
30
55
55
55
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
A
Write Cycle
Parameter
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Output Active from End of Write *
Write to Output in High Z *
Data Hold from Write Time
Address Hold Time
* Parameters guaranteed by design but not tested
Sym
t
WC
t
CW
t
AW
t
DW
t
WP
t
AS
t
OW
t
WHZ
t
DH
t
AH
–017
Min Max
17
12
12
10
13
0
3
10
0
0
–020
–025
–035
–045
–055
Min Max Min Max Min Max Min Max Min Max
20
15
15
12
15
0
3
10
0
0
0
0
25
20
20
15
20
0
3
10
0
0
35
25
25
18
25
0
4
15
0
0
45
30
30
20
30
0
4
15
0
0
55
40
40
20
40
0
4
15
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Data Retention Electrical Characteristics (Special Order Only)
(T
C
= -55°C to +125°C)
Parameter
V
CC
for Data Retention
Data Retention Current
Sym
V
DR
I
CCDR1
Test Conditions
CE
V
CC
– 0.2V
V
CC
= 3V, 17-55ns
All Speeds
Min
Max
2
5.5
11.6
Units
V
mA
Aeroflex Circuit Technology ACT-S128K32
3
SCD1659 REV E 5/21/01 Plainview NY (516) 694-6700