3
MGA-83563 Electrical Specifications,
V
d
= 3 V, T
C
= 25°C, using test circuit of Figure 2, unless noted.
Symbol
P
SAT
PAE
[3]
I
d[5]
Gain
Parameters and Test Conditions
Saturated Output Power
[3]
Power Added Efficiency
Device Current
Small Signal Gain
f = 0.9 GHz
f = 1.5 GHz
f = 2.0 GHz
f = 2.4 GHz
f = 4.0 GHz
f = 5.0 GHz
f = 6.0 GHz
f = 0.9 GHz
f = 1.5 GHz
f = 2.0 GHz
f = 2.4 GHz
f = 4.0 GHz
f = 5.0 GHz
f = 6.0 GHz
f = 0.9 GHz
f = 1.5 GHz
f = 2.0 GHz
f = 2.4 GHz
f = 4.0 GHz
f = 5.0 GHz
f = 6.0 GHz
f = 0.9 GHz
f = 1.5 GHz
f = 2.0 GHz
f = 2.4 GHz
f = 4.0 GHz
f = 5.0 GHz
f = 6.0 GHz
f = 2.4 GHz
f = 2.4 GHz
Units
dBm
%
mA
dB
Min.
20.5
25
Typ.
22.4
37
152
20
22
23
22
22
19
17
20.9
21.7
21.8
22
21.9
19.7
18.2
41
41
40
37
32
18
14
19.1
19.7
19.7
19.2
18.1
16
15
3.5
2.6
2.3
1.4
2.5
3.5
4.5
dB
dBm
-38
-30
29
200
Max.
Std.
Dev.
[4]
0.75
2.5
12.4
P
SAT
Saturated Output Power
dBm
PAE
Power Added Efficiency
%
P
1 dB [5]
Output Power at 1 dB Gain Compression
dBm
VSWR
in
Input VSWR into 50
Ω
Circuit A
Circuit B
f = 0.9 to 1.7 GHz
f = 1.8 to 3.0 GHz
f = 3.0 to 6.0 GHz
f = 0.9 to 2.0 GHz
f = 2.0 to 3.0 GHz
f = 3.0 to 4.0 GHz
f = 4.0 to 6.0 GHz
f = 0.9 to 3.0 GHz
f = 3.0 to 6.0 GHz
f = 0.9 GHz to 6.0 GHz
VSWR
out
Output VSWR into 50
Ω
Circuit A
Circuit B
ISOL
IP
3
Isolation
Third Order Intercept Point
Notes:
3. Measured using the final test circuit of Figure 1 with an input power of +4 dBm.
4. Standard Deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during
the initial characterization of this product, and is intended to be used as an estimate for distribution of the typical
specification.
5. For linear operation, refer to thermal sections in the Applications section of this data sheet.
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
