TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
OFFSET VOLTAGE vs.
AMBIENT TEMPERATURE
3
REPRESENTATIVE UNITS
GATE LEAKAGE CURRENT
vs. AMBIENT TEMPERATURE
GATE LEAKAGE CURRENT (pA)
4
600
500
400
300
200
100
0
I
GSS
OFFSET VOLTAGE (mV)
2
1
0
-1
-2
-3
-4
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
GATE SOURCE VOLTAGE
vs. ON - RESISTANCE
GATE SOURCE VOLTAGE (V)
D
4.0
+125°C
V
GS
3.0
+25°C
2.0
V
DS
I
DS(ON)
DRAIN - GATE DIODE CONNECTED VOLTAGE
TEMPCO vs. DRAIN SOURCE ON CURRENT
DRAIN- GATE DIODE CONNECTED
VOLTAGE TEMPCO (mV/
°C
)
5
-55°C
≤
T
A
≤
+125°C
2.5
5.0
S
0.0V
≤
V
DS
≤
5.0V
0
-2.5
1.0
0.1
1
10
100
1000
10000
-5
1
10
100
1000
ON - RESISTANCE (KΩ)
DRAIN SOURCE ON CURRENT (µA)
ALD1121E/ALD1123E
Advanced Linear Devices
8 of 14
ALD [ ADVANCED LINEAR DEVICES ]
