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ALD1123ESCL 参数 Datasheet PDF下载

ALD1123ESCL图片预览
型号: ALD1123ESCL
PDF下载: 下载PDF文件 查看货源
内容描述: QUAD /双EPAD®精密N沟道匹配的一对MOSFET阵列 [QUAD/DUAL EPAD® PRECISION N-CHANNEL MATCHED PAIR MOSFET ARRAY]
分类和应用:
文件页数/大小: 14 页 / 148 K
品牌: ALD [ ADVANCED LINEAR DEVICES ]
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TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
DRAIN SOURCE ON CURRENT
(mA)
5
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
100
DRAIN SOURCE ON CURRENT
(
µA)
Zero Temperature
Coefficient (ZTC)
125°C
4
3
-55°C
-25°C
0°C
ZTC
125°C
ZTC
125°C
50
V
t
= 1.0V
2
{
- 25°C
V
t
= 1.2V
- 25°C
{
V
t
= 1.4V
- 25°C
{
1
0
0
1
2
3
70°C
4
125°C
0
5
1.0
1.2
1.4
1.6
1.8
2.0
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
CHANGE IN DIFFERENTIAL THRESHOLD
VOLTAGE vs. AMBIENT TEMPERATURE
DRAIN SOURCE ON CURRENT,
BIAS CURRENT (µA)
CHANGE IN DIFFERENTIAL
THRESHOLDVOLTAGE (mV)
+10
+8
+6
+4
+2
0
-2
-4
-6
-8
-10
-50
-25
0
10000
REPRESENTATIVE UNITS
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. ON - RESISTANCE
V
DS
= R
ON
• I
DS(ON)
V
GS
= +0.9V to +5.0V
V
DS
= 5.0V
D
V
DS
I
DS(ON)
S
V
DS
= 0.5V
1000
100
10
1.0
V
GS
0.1
25
50
75
100
125
0.1
1.0
10
100
1000
10000
AMBIENT TEMPERATURE (°C)
ON - RESISTANCE (KΩ)
GATE SOURCE VOLTAGE vs. DRAIN
SOURCE ON CURRENT
5
DRAIN SOURCE ON CURRENT vs.
OUTPUT VOLTAGE
5
DRAIN SOURCE ON CURRENT
(mA)
GATE SOURCE VOLTAGE (V)
D
V
DS
I
DS(ON)
4
3
2
1
0
0.1
V
GS
S
V
DS
= 0.5V
T
A
= +125°C
4
3
V
t
= 1.000V
VDS = VGS
T
A
= -55°C
V
DS
= 0.5V
T
A
= +25°C
T
A
= 0°C
2
T
A
= +50°C
1
0
0
1
2
3
T
A
= +125°C
4
5
V
DS
= 5V
T
A
= +25°C
V
DS
= 5V
V
DS
= R
ON
• I
DS(ON)
T
A
= +125°C
1
10
100
1000
10000
DRAIN SOURCE ON CURRENT (µA)
OUTPUT VOLTAGE (V)
ALD1121E/ALD1123E
Advanced Linear Devices
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