ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage,
V
DS
10.6V
Gate-Source voltage,
V
GS
10.6V
Power dissipation
500 mW
Operating temperature range SCL, PCL, SAL, PAL package
0°C to +70°C
Storage temperature range
-65°C to +150°C
Lead temperature, 10 seconds
+260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V V- = -5V TA = 25
°
C unless otherwise specified
ALD114804A/ALD114904A
Parameter
Gate Threshold Voltage
Offset Voltage
VGS(th)1-VGS(th)2
Offset Voltage Tempco
GateThreshold Voltage Tempco
Symbol
VGS(th)
VOS
TCVOS
TCVGS(th)
Min
-0.42
Typ
-0.40
2
Max
-0.38
5
ALD114804/ALD114904
Min
-0.44
Typ
-0.40
7
Max
-0.36
20
Unit
V
mV
µV/°C
mV/°C
Test Conditions
IDS =1µA, VDS = 0.1V
IDS =1µA
VDS1 = VDS2
ID = 1µA, VDS = 0.1V
ID = 20µA, VDS = 0.1V
ID = 40µA, VDS = 0.1V
VGS = +9.1V, VDS = +5V
VGS = +3.6V, VDS = +5V
VGS = +3.6V
VDS = +8.6V
5
-1.7
0.0
+1.6
12.0
3.0
1.4
5
-1.7
0.0
+1.6
12.0
3.0
1.4
On Drain Current
IDS (ON)
GFS
∆G
FS
GOS
RDS (ON)
mA
Forward Transconductance
mmho
Transconductance Mismatch
Output Conductance
1.8
68
1.8
68
%
µmho
Ω
VGS = +3.6V
VDS = +8.6V
VDS = +0.1V
VGS = +3.6V
VDS = +0.1V
VGS = +0.0V
Drain Source On Resistance
500
500
Drain Source On Resistance
RDS (ON)
∆R
DS (ON)
5.4
5.4
KΩ
Drain Source On Resistance
Tolerance
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current
1
10
10
%
∆R
DS (ON)
BVDSX
IDS (OFF)
IGSS
CISS
CRSS
ton
toff
10
0.5
0.5
%
10
V
IDS = 1.0µA
V-= VGS = -1.4V
VGS = -1.4V, VDS =+5V
TA = 125°C
VDS = 0V VGS = +5V
TA =125°C
10
400
4
200
1
10
400
4
200
1
pA
nA
pA
nA
pF
pF
ns
ns
dB
Gate Leakage Current
1
3
3
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
Notes:
1
2.5
0.1
10
10
60
2.5
0.1
10
10
60
V+ = 5V RL= 5KΩ
V+ = 5V RL= 5KΩ
f = 100KHz
Consists of junction leakage currents
ALD114804/ALD114804A/ALD114904/ALD114904A
Advanced Linear Devices
2 of 11
ALD [ ADVANCED LINEAR DEVICES ]
