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ALD114804_12 参数 Datasheet PDF下载

ALD114804_12图片预览
型号: ALD114804_12
PDF下载: 下载PDF文件 查看货源
内容描述: QUAD /双N沟道耗尽型EPAD精密匹配的一对MOSFET阵列 [QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY]
分类和应用:
文件页数/大小: 11 页 / 127 K
品牌: ALD [ ADVANCED LINEAR DEVICES ]
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TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
DRAIN-SOURCE ON RESISTANCE
(Ω)
5
DRAIN SOURCE ON CURRENT
(mA)
DRAIN-SOURCE ON RESISTANCE
vs. DRAIN-SOURCE ON CURRENT
2500
TA = 25°C
T
A
= +25°C
4
VGS-VGS(TH)=+5V
2000
1500
VGS = VGS(TH) +4V
VGS-VGS(TH)=+4V
3
VGS-VGS(TH)=+3V
2
VGS-VGS(TH)=+2V
1000
500
VGS = VGS(TH) +6V
1
VGS-VGS(TH)=+1V
0
0
2
4
6
8
10
0
10
100
1000
10000
DRAIN-SOURCE ON VOLTAGE (V)
DRAIN-SOURCE ON CURRENT (µA)
FORWARD TRANSFER CHARACTERISTICS
DRAIN- SOURCE ON CURRENT
(mA )
20
2.5
VGS(TH) = -3.5V
TRANSCONDUCTANCE vs.
AMBIENT TEMPERATURE
TRANSCONDUCTANCE
(mA/V)
15
T
A
= 25°C
V
DS
= +10V
VGS(TH) = -1.3V
VGS(TH) = -0.4V
2.0
1.5
1.0
0.5
0
10
VGS(TH) = 0.0V
VGS(TH) = +0.2V
5
VGS(TH) = +1.4V
VGS(TH) = +0.8V
0
-4
-2
0
2
4
6
8
10
-50
-25
0
25
50
75
100
125
GATE-SOURCE VOLTAGE (V)
AMBIENT TEMPERATURE (°C)
SUBTHRESHOLD FORWARD TRANSFER
CHARACTERISTICS
DRAIN-SOURCE ON CURRENT
(nA)
10000
1000
VGS(TH)=-1.3V
TA = +25°C
VDS=+0.1V
SUBTHRESHOLD FORWARD TRANSFER
CHARACTERISTICS
DRAIN-SOURCE ON CURRENT
(nA)
100000
VGS(TH)=0.0V
1000
100
10
1
0.1
V
DS
=0.1V
Slope ~ 110mV/decade
=
10
1
0.1
0.01
-4
-3
-2
VGS(TH)=-3.5V
VGS(TH)=+0.2V
VGS(TH)=+0.8V
VGS(TH)=+1.4V
100
VGS(TH)=-0.4V
-1
0
1
2
0.01
V
GS(th)
-0.5
V
GS(th)
-0.4
V
GS(th)
-0.3
V
GS(th)
-0.2
V
GS(th)
-0.1
V
GS(th)
GATE-SOURCE VOLTAGE (V)
GATE-SOURCE VOLTAGE (V)
ALD114804/ALD114804A/ALD114904/ALD114904A
Advanced Linear Devices
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