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AS4C14405-60JC 参数 Datasheet PDF下载

AS4C14405-60JC图片预览
型号: AS4C14405-60JC
PDF下载: 下载PDF文件 查看货源
内容描述: 1M位× 4 CMOS DRAM(快速页面模式或EDO ) [1M-bit × 4 CMOS DRAM (Fast page mode or EDO)]
分类和应用: 动态存储器
文件页数/大小: 16 页 / 395 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4C14400
®
Write cycle
-40
Symbol
t
ASC
t
CAH
t
AWR
t
WCS
t
WCH
t
WCR
t
WP
t
RWL
t
CWL
t
DS
t
DH
t
DHR
Parameter
Column address setup time
Column address hold time
Column address hold time to RAS
Write command setup time
Write command hold time
Write command hold time to RAS
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data-In setup time
Data-In hold time
Data-In hold time to RAS
Min
0
8
30
0
5
30
8
10
10
0
8
30
Max
Min
0
10
40
0
10
40
10
13
13
0
10
40
-50
Max
Min
0
10
45
0
10
45
10
15
15
0
10
45
-60
Max
Min
0
15
55
0
15
55
15
18
18
0
15
55
-70
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
12
12
11
11
Notes
Shaded areas contain advance information.
Read-modify-write cycle
-40
Symbol
t
RWC
t
RWD
t
CWD
t
AWD
t
RSH(W)
t
CAS(W)
Parameter
Read-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
CAS to RAS hold time (write)
CAS pulse width (write)
Min
105
60
30
40
10
10
Max
Min
131
73
36
48
13
13
-50
Max
Min
155
85
40
55
15
15
-60
Max
Min
181
98
46
63
18
18
-70
Max
Unit
ns
ns
ns
ns
ns
ns
11
11
11
Notes
Shaded areas contain advance information.
5