DATA SHEET
DC CHARACTERISTICS
CMOS Compatible
Parameter
I
LI
I
LIT
I
LO
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
V
IL
V
IH
V
ID
V
OL
V
OH1
V
OH2
V
LKO
Low V
CC
Lock-Out Voltage
Description
Input Load Current
A9 Input Load Current
Output Leakage Current
V
CC
Active Read Current
(Notes 1, 2)
V
CC
Active Write Current
(Notes 2, 3, 5)
V
CC
Standby Current (Note 2)
V
CC
Reset Current (Note 2)
Automatic Sleep Mode
(Notes 2, 4)
Input Low Voltage
Input High Voltage
Voltage for Autoselect and
Temporary Sector Unprotect
Output Low Voltage
Output High Voltage
V
CC
= 3.3 V
I
OL
= 4.0 mA, V
CC
= V
CC min
I
OH
= –2.0 mA, V
CC
= V
CC min
I
OH
= –100 µA, V
CC
= V
CC min
0.85 V
CC
V
CC
–0.4
2.3
2.5
V
Test Conditions
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC max
V
CC
= V
CC max
; A9 = 12.5 V
V
OUT
= V
SS
to V
CC
,
V
CC
= V
CC max
5 MHz
CE# = V
IL,
OE#
=
V
IH
CE# = V
IL,
OE#
=
V
IH
CE#, RESET# = V
CC
±0.3
V
RESET# = V
SS
±
0.3 V
V
IH
= V
CC
±
0.3 V;
V
IL
= V
SS
±
0.3 V
–0.5
0.7 x V
CC
11.5
1 MHz
7
2
15
0.2
0.2
0.2
Min
Typ
Max
±1.0
35
±1.0
12
mA
4
30
5
5
5
0.8
V
CC
+ 0.3
12.5
0.45
mA
µA
µA
µA
V
V
V
V
V
Unit
µA
µA
µA
Notes:
1. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
. Typical V
CC
is 3.0 V.
2. Maximum I
CC
specifications are tested with V
CC
= V
CCmax
.
3. I
CC
active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30 ns.
5. Not 100% tested.
24
Am29LV004B
21522D5 October 11, 2006
AMD [ ADVANCED MICRO DEVICES ]
