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AM29LV040B-70EI 参数 Datasheet PDF下载

AM29LV040B-70EI图片预览
型号: AM29LV040B-70EI
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K的×8位) CMOS 3.0伏只,均匀部门32引脚闪存 [4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 37 页 / 698 K
品牌: AMD [ ADVANCED MICRO DEVICES ]
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D A T A
Table 3.
S H E E T
Am29LV040B Autoselect Codes (High Voltage Method)
A18
to
A16
X
X
A15
to
A10
X
X
A8
to
A7
X
X
A5
to
A2
X
X
DQ7
to
DQ0
01h
4Fh
01h
(protected)
Description
Manufacturer ID: AMD
Device ID: Am29LV040B
CE#
L
L
OE#
L
L
WE#
H
H
A9
V
ID
V
ID
A6
L
L
A1
L
L
A0
L
H
Sector Protection Verification
L
L
H
SA
X
V
ID
X
L
X
H
L
00h
(unprotected)
L = Logic Low = V
IL
, H = Logic High = V
IH
, SA = Sector Address, X = Don’t care.
Sector Protection/Unprotection
The hardware sector protection feature disables both
program and erase operations in any sector. The hard-
ware sector unprotection feature re-enables both
program and erase operations in previously protected
sectors.
Sector protection/unprotection method intended only
for programming equipment requires V
ID
on address
pin A9 and OE#. This method is compatible with pro-
grammer routines written for earlier 3.0 volt-only AMD
flash devices. Publication number 22168 contains
further details; contact an AMD representative to
request a copy.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is protected
or unprotected. See “Autoselect Mode” for details.
erasure or programming, which might otherwise be
caused by spurious system level signals during V
CC
power-up and power-down transitions, or from system
noise.
Low V
CC
Write Inhibit
When V
CC
is less than V
LKO
, the device does not
accept any write cycles. This protects data during V
CC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until V
CC
is greater than V
LKO
. The system must provide the
proper signals to the control pins to prevent uninten-
tional writes when V
CC
is greater than V
LKO
.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
V
IL
, CE# = V
IH
or WE# = V
IH
. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = V
IL
and OE# = V
IH
during power up, the
device does not accept commands on the rising edge
of WE#. The internal state machine is automatically
reset to reading array data on power-up.
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadver tent writes (refer to Table 4 for
command definitions). In addition, the following hard-
ware data protection measures prevent accidental
12
Am29LV040B
21354E4 October 11, 2006