PI0256HSN, PI0512HSN, PI1024HSN
Engineering Data Sheet
Electro-Optical Characteristics
The following table lists the electro-optical characteristics.
Table 4. Electro-optical characteristics at 25°C.
Parameters
Center-to-center spacing
Aperture width
Pixel area
Fill factor
1
Quantum efficiency
1,2
Responsivity
1,2
Nonuniformity of response
3
Saturation exposure
2
Saturation charge
4
Average dark current
5
Spectral response peak
Spectral response range
6
Symbol
A
FF
QE
R
Esat
Qsat
λ
Typical
25
2500
6.25x10
-4
72
70
1.5×10
-4
2
370 (w/ cap) 430 (w/ cap)
130 (w/o cap) 170 (w/o cap)
65 (w/ cap)
55 (w/ cap)
20 (w/o cap) 25 (w/o cap)
0.2
600
180 – 1000
Min
Max
5
Units
µm
µm
cm
2
%
%
C/J/cm
2
+/-%
nJ/cm
2
pC
0.5
pA
nm
nm
Notes:
.
.
.
1. Fill factor, quantum efficiency, and responsivity are related by the equation R = (q
e
λ/hc)
QE FF A, where q
e
is the
charge of an electron and hc/λ is the energy of a photon at a given wavelength. Responsivity is therefore given per
pixel.
2. At wavelength of 575 nm (yellow-green) and with no window.
3. Measured at 50% Vsat with an incandescent tungsten lamp filtered with an Schott KG-1 heat-absorbing filter.
4. Saturation charge specified for a video output bias of 4.5 volts.
o
5. Max dark leakage
≤
1.5 x average dark leakage measured with an integration period of 500 ms at 25 C.
6. From 250-1000 nm, responsivity
≥
20% of its peak value.
Page 7 of 8
March 13, 2002
AMI [ AMI SEMICONDUCTOR ]
