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A617308V-12 参数 Datasheet PDF下载

A617308V-12图片预览
型号: A617308V-12
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8位高速CMOS SRAM [128K X 8 BIT HIGH SPEED CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 191 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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A617308 Series  
Timing Waveforms (continued)  
Write Cycle 2  
(Chip Enable Controlled)  
tWC  
Address  
3
tAW  
tWR  
5
tCW  
CE1  
CE2  
(4)  
(4)  
1
tAS  
2
tWP  
WE  
tDW  
tDH  
DIN  
7
tWHZ  
DOUT  
Notes: 1. tAS is measured from the address valid to the beginning of Write.  
2. A Write occurs during the overlap (tWP) of a low , a high CE2 and a low WE .  
CE1  
or WE going high or CE2 going low to the end of the Write cycle.  
3. tWR is measured from the earliest of  
CE1  
4. If the  
low transition or the CE2 high transition occurs simultaneously with the WE low transition or after  
CE1  
the WE transition, outputs remain in a high impedance state.  
5. tCW is measured from the later of going low or CE2 going high to the end of Write.  
CE1  
6. OE is continuously low. ( OE = VIL)  
7. Transition is measured ±200mV from steady state. This parameter is sampled and not 100% tested.  
PRELIMINARY  
(January, 2000, Version 0.2)  
8
AMIC Technology, Inc.