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LP62S16256EV-70LLT 参数 Datasheet PDF下载

LP62S16256EV-70LLT图片预览
型号: LP62S16256EV-70LLT
PDF下载: 下载PDF文件 查看货源
内容描述: 256K x 16位的低电压CMOS SRAM [256K X 16 BIT LOW VOLTAGE CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 15 页 / 168 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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LP62S16256E-T Series  
Absolute Maximum Ratings*  
*Comments  
VCC to GND ..............................................-0.5V to +4.0V  
IN, IN/OUT Volt to GND................... -0.5V to VCC + 0.5V  
Operating Temperature, Topr ...................-25°C to +85°C  
Storage Temperature, Tstg.....................-55°C to +125°C  
Power Dissipation, PT ...................................................................... 0.7W  
Stresses above those listed under "Absolute Maximum  
Ratings" may cause permanent damage to this device.  
These are stress ratings only. Functional operation of this  
device at these or any other conditions above those  
indicated in the operational sections of this specification  
is not implied or intended. Exposure to the absolute  
maximum rating conditions for extended periods may  
affect device reliability.  
DC Electrical Characteristics (TA = -25°C to + 85°C, VCC = 2.7V to 3.6V, GND = 0V)  
LP62S16256E-55LLT / 70LLT  
Symbol  
Parameter  
Unit  
Conditions  
Min.  
Typ.  
Max.  
Input Leakage Current  
Output Leakage Current  
-
-
1
VIN = GND to VCC  
½ILI½  
mA  
mA  
CE = VIH  
-
-
1
½ILO½  
HB = VIH or OE = VIH or  
WE = VIH  
VI/O = GND to VCC  
ICC  
Active Power Supply Current  
-
-
-
5
mA  
mA  
CE = VIL, II/O = 0mA  
Min. Cycle, Duty = 100%  
ICC1  
25  
40  
CE = VI, II/O = 0mA  
Dynamic Operating  
Current  
CE = VIL, VIH = VCC,  
VIL = 0V, f = 1MHz,  
II/O = 0 mA  
ICC2  
ISB  
-
-
5
-
15  
1
mA  
mA  
VCC £ 3.3V  
CE = VIH  
Standby Current  
VCC £ 3.3V  
ISB1  
-
0.3  
10  
mA  
CE ³ VCC - 0.2V,  
VIN ³ 0V  
VOL  
VOH  
Output Low Voltage  
Output High Voltage  
-
-
-
0.4  
-
V
V
IOL = 2.1 mA  
IOH = -1.0 mA  
2.2  
(January, 2002, Version 2.0)  
5
AMIC Technology, Inc.