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AS8501 参数 Datasheet PDF下载

AS8501图片预览
型号: AS8501
PDF下载: 下载PDF文件 查看货源
内容描述: 高精确度的电压和电流测量传感器接口 [High precision voltage and current measurement sensor interface]
分类和应用: 传感器
文件页数/大小: 40 页 / 470 K
品牌: AMSCO [ AUSTRIAMICROSYSTEMS AG ]
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AS8501 -
Preliminary Data Sheet
Electrical characteristics (continued)
austriamicrosystems
VDDA=5V +/-0.1 V, fclk=8.192 MHz, chopping ratio MM=4 (see 7.5.3), oversampling frequency=2.048 MHz, oversampling ratio=128
temperature range : -40 to 125°C if not otherwise noted
symbol
cal_err
parameter
calibration error
for 30 000 digits output at
full range
nonlinearity
conditions
min
G1, 720 mV
G6, 120 mV
G24, 30 mV
G50, 15 mV
G100, 7.5 mV
gain 6 @ room temp
gain 24 @ room temp
gain 50 @ room temp
gain 100 @ room temp
all gains
-40 to 125°C
-40 to 85°C
85 to 125°C
-40 to 85 °C
room temperature
f=0 to 1 kHz
f=10 Hz
0 to 100 Hz
0 to 10 Hz
1000 Hz
room temperature
room temperature
room temperature
4.9 to 5.1 V
5
2
0.5
90
80
-70
-50
-1
-0.5
-2
-4
typ
0.1
max
0.2
units
%
1)
lin_err
lin_errTC
Vos
TC of linearity error
offset voltage:
RSHH_RSHL
offset voltage: ETS, ETR,
VBAT
Offset voltage drift: RSHH-
RSHL
input bias/leakage current,
all channels
voltage noise density
(G=24)
current noise density
(G=24)
voltage noise, peak (G=24)
voltage noise, RMS (G=24)
signal to noise (G=24,
G4.8)
signal to distortion (G24,
G4.8)
chanel to chanel insulation
power supply rejection ratio
0.1
0.03
0.05
0.05
1
0.2
0.5
1
0.002
0.2
35
20
3
1
1.5
100
100
-90
-60
0.3
0.05
0.07
0.1
5
0.5
1
2
% or 30 digits
% or 10 digits
% or 15 digits
% or 20 digits
ppm/K
µV
µV
µV
µV/K
2)
2)
2)
2)
3)
4)
4)
4)
dVos/dT
Ib
Vndin
Indin
en p_p
en_RMS
SNR
SDR
CCI
PSRR
1
50
100
5
1.5
2
nA
nV//Hz
fA//Hz
µV
µV
µV
dBmin
dBmin
dBmax
dBmax
5)
6)
6)
6)
6)
Notes:
1)
at room temperature / corresponding calibration factors are stored within the ZZR-register
2
) whatever is lower. Maximum limits for gains 50 and 100 are derived from device characterization and are not tested.
3)
this value measured in raw mode at room temperature and at 60°C. Maximum limits over temperature range are derived from device characterization.
4)
TC variations are included in the above given maximum limit of linearity error. Max value is derived from device characterization and not tested
5)
Leakage current is specified for all gain settings (except G1) for positive input voltages below 200 mV. Test is done at different input voltages with
subsequent extrapolation for 200mV. In the temperature range 85-125°C it may be as high as 5 nA at the upper limit. In normal operation a
temperature independent digital offset of -0.7 digits is present due to internal rounding.
6)
This parameter is not measured directly. It is measured indirectly via gain measurement of the whole path at room temperature
Revision 1.1, 04-April-06
www.austriamicrosystems.com
Page 6 of 40