ALT6708
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
Supply Voltage (V
CC
)
Battery Voltage (V
BATT
)
Control Voltages (V
MODE1
, V
MODE2
, V
EN
)
RF Input Power (P
IN
)
Storage Temperature (T
STG
)
MIN
0
0
0
-
-40
MAX
+5
+6
+3.5
+10
+150
UNIT
V
V
V
dBm
°C
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure
to absolute ratings for extended periods of time may adversely affect
reliability.
Table 3: Operating Ranges
PARAMETER
Operating Frequency (f)
Supply Voltage (V
CC
)
Enable Voltage (V
EN
)
Mode Control Voltage (V
MODE1
,V
MODE2
)
WCDMA/UMTS Output Power
(1, 3)
R99 WCDMA, HPM
HSPA (MPR=0), HPM
LTE
(2)
R99 WCDMA, MPM
(2)
LTE & HSPA (MPR=0), MPM
R99 WCDMA, LPM
(2)
LTE & HSPA (MPR=0), LPM
Case Temperature (T
C
)
MIN
880
+3.1
+1.35
0
+1.35
0
28.0
26.9
26.9
-
-
-
-40
TYP
-
+3.4
+1.8
-
+1.8
-
28.8
27.7
27.7
17.0
16.0
7.5
6.5
-
MAX
915
+4.35
+3.1
+0.5
+3.1
+0.5
-
-
-
-
-
-
+90
UNIT
MHz
V
V
V
P
OUT
< +28.8 dBm
PA "on"
PA "shut down"
Low Bias Mode
High Bias Mode
COMMENTS
dBm
3GPP TS 34.121-1, Rel 8
Table C.11.1.3,
SUBTEST 1
TS 36.101 Rel 8 for LTE
°C
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
Notes:
(1) For operation at 3.1 V, P
OUT
is derated by 0.8 dB.
(2) LTE waveform characteristics: up to 15MHz, QPSK, RB = 16.
(3) For Operation at +105 °C, P
OUT
is derated by 1.0 dB.
3
Data Sheet - Rev 2.3
03/2012